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this is information on a product in full production. june 2013 docid023466 rev 2 1/22 22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 n-channel 800 v, 0.19 typ., 19.5 a supermesh?5 power mosfet in d 2 pak, to-220fp, to-220 and to-247 packages datasheet ? production data figure 1. internal schematic diagram features ? to-220 worldwide best r ds(on) ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these n-channel zener-protected power mosfet are designed using st?s revolutionary avalanche-rugged very high voltage supermesh? 5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. '7$% * 6 am01476v1 to-220 1 2 3 tab 1 2 3 1 2 3 to-220fp to-247 1 3 tab d 2 pak order codes v ds @ t jmax r ds(on) max i d p tot stb25n80k5 800 v < 0.260 19.5 a 250 w stf25n80k5 40 w STP25N80K5 250 w stw25n80k5 table 1. device summary order codes marking package packaging stb25n80k5 25n80k5 d 2 pak tape and reel stf25n80k5 to-220fp tube STP25N80K5 to-220 stw25n80k5 to-247 www.st.com
contents stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 2/22 docid023466 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid023466 rev 2 3/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak, to-220, to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 19.5 19.5 (1) 1. limited by package. a i d drain current (continuous) at t c = 100 c 12.3 12.3 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 78 78 (1) a p tot total dissipation at t c = 25 c 250 40 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 6.5 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 200 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 19.5 a, di/dt 100 a/s, v peak v (br)dss peak diode recovery voltage slope 6 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-247 d 2 pak to-220fp r thj-case thermal resistance junction-case max 0.5 3.1 c/w r thj-amb thermal resistance junction-amb max 62.5 50 62.5 r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu. thermal resistance junction-pcb max 30
electrical characteristics stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 4/22 docid023466 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10 a 0.19 0.260 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -1600- pf c oss output capacitance - 130 - pf c rss reverse transfer capacitance -2-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -185- pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -300- pf r g intrinsic gate resistance f = 1 mhz open drain - 4 - q g total gate charge v dd = 640 v, i d = 19.5 a v gs =10 v (see figure 19 ) -40-nc q gs gate-source charge - 10 nc q gd gate-drain charge - 25 nc
docid023466 rev 2 5/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 electrical characteristics the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 10 a, r g =4.7 , v gs =10 v (see figure 21 ) -25-ns t r rise time - 13 - ns t d(off) turn-off delay time - 60 - ns t f fall time - 15 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 19.5 a i sdm source-drain current (pulsed) - 78 a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 19.5 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 19.5 a, v dd = 60 v di/dt = 100 a/s, (see figure 20 ) - 515 ns q rr reverse recovery charge - 11 c i rrm reverse recovery current - 43.2 a t rr reverse recovery time i sd = 19.5 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 20 ) - 615 ns q rr reverse recovery charge - 13 c i rrm reverse recovery current - 43 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - - v
electrical characteristics stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 6/22 docid023466 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak figure 3. thermal impedance for d 2 pak and to-220 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.1 tj=150c tc=25c single pulse 10 s 1s 100 s am15722v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.01 tj=150c tc=25c single pulse 10 s 100 s 10 am15723v1 figure 6. safe operating area for to-220 figure 7. normalized b vdss vs temperature i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.1 tj=150c tc=25c single pulse 10 s 100 s am15724v1 bv dss -100 t j (c) (norm) -50 0.8 0.85 0.9 0.95 1 i d =1 ma 0 50 1.05 100 150 1.1 am15733v1
docid023466 rev 2 7/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 electrical characteristics figure 8. safe operating area for to-247 figure 9. thermal impedance for to-247 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.1 tj=150c tc=25c single pulse 10 s 100 s am15725v1 figure 10. output characteristics figure 11. transfer characteristics figure 12. static drain-source on-resistance figure 13. gate charge vs gate-source voltage i d 15 10 5 0 0 10 v ds (v) (a) 5 15 20 6v 7v 8v 20 40 9v 10v 11v 25 30 35 45 am15726v1 i d 5 0 4 6 v gs (v) 8 (a) 5 7 10 15 v ds =20v 20 25 9 10 30 35 40 45 am15727v1 r ds(on) 0.15 0.1 0.05 0 4 8 i d (a) ( ) 6 10 0.2 12 18 v gs =10v 14 16 20 0.25 0.3 0.35 0.4 am15734v1 v gs 6 4 2 0 0 q g (nc) (v) 20 8 10 10 300 200 100 0 400 v ds 30 40 500 v ds (v) 12 600 am15728v1
electrical characteristics stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 8/22 docid023466 rev 2 figure 14. capacitance variations figure 15. output capacitance stored energy figure 16. normalized on-resistance vs temperature figure 17. source-drain diode forward characteristics c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 10000 am15729v1 eoss 0 v ds (v) (j) 200 100 500 0 2 4 6 8 300 400 600 700 10 12 14 16 18 20 22 800 am15730v1 r ds(on) 2 1.5 1 0.5 t j (c) (norm) 0 -100 -50 0 50 100 150 2.5 v gs =10v i d =10a am15731v1 v sd 0 10 i sd (a) (v) 5 15 20 0.5 0.6 0.7 0.8 t j =50c t j =150c t j =25c 0.9 1 am15732v1
docid023466 rev 2 9/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 test circuits 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 10/22 docid023466 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023466 rev 2 11/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 package mechanical data table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 12/22 docid023466 rev 2 figure 24. d2pak (to-263) drawing figure 25. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid023466 rev 2 13/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 package mechanical data table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 14/22 docid023466 rev 2 figure 26. to-220fp drawing 7012510_rev_k_b
docid023466 rev 2 15/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 package mechanical data table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 16/22 docid023466 rev 2 figure 27. to-220 type a drawing bw\sh$b5hyb7
docid023466 rev 2 17/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 package mechanical data table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 18/22 docid023466 rev 2 figure 28. to-247 drawing 0075325_g
docid023466 rev 2 19/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 packaging information 5 packaging information table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging information stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 20/22 docid023466 rev 2 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid023466 rev 2 21/22 stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 revision history 6 revision history table 14. document revision history date revision changes 17-jul-2012 1 first release. 04-jun-2013 2 ? modified: i ar , e as , dv/dt on table 2 , r ds(on) value on table 4 , entire values on table 5 , 6 and 7 ? updated: section 4: package mechanical data ? minor text changes ? updated: table 11 and figure 27 ? document status promoted from preliminary data to production data
stb25n80k5, stf25n80k5, STP25N80K5, stw25n80k5 22/22 docid023466 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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